IndiumV3, Main, Repository, bibRecord, 002B12

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green : Novel Gain Materials Based on III-V-N Compounds

Identifieur interne : 002B12 ( Main/Repository ); précédent : 002B11; suivant : 002B13

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green : Novel Gain Materials Based on III-V-N Compounds

Auteurs : RBID : Pascal:11-0235861

Descripteurs français

Pascal (Inist)
- Méthode MOVPE, Epitaxie jet moléculaire, Microscopie électronique transmission, Photoluminescence, Composition chimique, Epaisseur, Fluctuation, Gallium Indium Nitrure Mixte, Nitrure d'indium, Puits quantique, InGaN, GaN.

English descriptors

KwdEn :
- Chemical composition, Fluctuations, Gallium Indium Nitrides Mixed, Indium nitride, MOVPE method, Molecular beam epitaxy, Photoluminescence, Quantum wells, Thickness, Transmission electron microscopy.

Abstract

Transmission electron microscopy and photoluminescence investigations have been carried out on a series of quantum wells grown by molecular beam epitaxy and metal organic vapour phase epitaxy. In both cases, the emission wavelength and the peak width agree with the indium local composition as extracted from strain measurements and with the well width. As could be expected, the data is at small variance with the nominal values as set during growth, but the general trends are similar.

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Pascal:11-0235861

Le document en format XML

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<author><name sortKey="Mutta, G R" uniqKey="Mutta G">G. R. Mutta</name>
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<author><name sortKey="Ruterana, P" uniqKey="Ruterana P">P. Ruterana</name>
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<author><name sortKey="Doualan, J L" uniqKey="Doualan J">J. L. Doualan</name>
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<author><name sortKey="Kaufmann, N A K" uniqKey="Kaufmann N">N. A. K. Kaufmann</name>
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<author><name sortKey="Dussaigne, A" uniqKey="Dussaigne A">A. Dussaigne</name>
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<author><name sortKey="Martin, D" uniqKey="Martin D">D. Martin</name>
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<term>Fluctuations</term>
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<term>Indium nitride</term>
<term>MOVPE method</term>
<term>Molecular beam epitaxy</term>
<term>Photoluminescence</term>
<term>Quantum wells</term>
<term>Thickness</term>
<term>Transmission electron microscopy</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Méthode MOVPE</term>
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<term>Photoluminescence</term>
<term>Composition chimique</term>
<term>Epaisseur</term>
<term>Fluctuation</term>
<term>Gallium Indium Nitrure Mixte</term>
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<front><div type="abstract" xml:lang="en">Transmission electron microscopy and photoluminescence investigations have been carried out on a series of quantum wells grown by molecular beam epitaxy and metal organic vapour phase epitaxy. In both cases, the emission wavelength and the peak width agree with the indium local composition as extracted from strain measurements and with the well width. As could be expected, the data is at small variance with the nominal values as set during growth, but the general trends are similar.</div>
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Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green : Novel Gain Materials Based on III-V-N Compounds

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green : Novel Gain Materials Based on III-V-N Compounds

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri